Product overview
- Product number
- IPD60R385CPATMA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET N-CH 600V 9A TO252-3
Documents and media
- Datasheets
- IPD60R385CPATMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 790 pF @ 100 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Not For New Designs
- Power Dissipation (Max) :
- 83W (Tc)
- Rds On (Max) @ Id, Vgs :
- 385mOhm @ 5.2A, 10V
- Supplier Device Package :
- PG-TO252-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 340µA
product description
MOSFET N-CH 600V 9A TO252-3