Product overview
Documents and media
- Datasheets
- SI4488DY-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A (Ta)
- Drain to Source Voltage (Vdss) :
- 150 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 36 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.56W (Ta)
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 5A, 10V
- Supplier Device Package :
- 8-SOIC
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA (Min)
product description
MOSFET N-CH 150V 3.5A 8SO
