Product overview
- Product number
- SQJQ466E-T1_GE3
- Manufacturer
- Vishay
- product description
- MOSFET N-CH 60V 200A PPAK 8 X 8
Documents and media
- Datasheets
- SQJQ466E-T1_GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 200A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 180 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10210 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- PowerPAK® 8 x 8
- Part Status :
- Active
- Power Dissipation (Max) :
- 150W (Tc)
- Rds On (Max) @ Id, Vgs :
- 1.9mOhm @ 10A, 10V
- Supplier Device Package :
- PowerPAK® 8 x 8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
product description
MOSFET N-CH 60V 200A PPAK 8 X 8