Datasheets

SQM120N02-1M3L_GE3

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

290 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

14500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Power Dissipation (Max) :

375W (Tc)

Rds On (Max) @ Id, Vgs :

1.3mOhm @ 40A, 10V

Supplier Device Package :

TO-263 (D²Pak)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA