Product overview
- Product number
- SIS892ADN-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET N-CH 100V 28A PPAK1212-8
Documents and media
- Datasheets
- SIS892ADN-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 28A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 550 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8
- Part Status :
- Active
- Power Dissipation (Max) :
- 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs :
- 33mOhm @ 10A, 10V
- Supplier Device Package :
- PowerPAK® 1212-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
MOSFET N-CH 100V 28A PPAK1212-8
Purchases and prices
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