Product overview
- Product number
- IPP60R280CFD7XKSA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET N-CH 650V 9A TO220-3
Documents and media
- Datasheets
- IPP60R280CFD7XKSA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 807 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 52W (Tc)
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 3.6A, 10V
- Supplier Device Package :
- PG-TO220-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 180µA
product description
MOSFET N-CH 650V 9A TO220-3
