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Product overview

Product number
PSMN1R1-30PL,127
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
NEXPERIA PSMN1R1-30PL - 120A, 30

Documents and media

Datasheets
PSMN1R1-30PL,127

Product Details

Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
14850 pF @ 15 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power Dissipation (Max) :
338W (Tc)
Rds On (Max) @ Id, Vgs :
1.3mOhm @ 25A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 1mA

product description

NEXPERIA PSMN1R1-30PL - 120A, 30

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