Product overview
- Product number
- PHB29N08T,118
- Manufacturer
- Rochester Electronics
- product description
- NEXPERIA PHB29N08T - 27A, 75V, 0
Documents and media
- Datasheets
- PHB29N08T,118
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 27A (Tc)
- Drain to Source Voltage (Vdss) :
- 75 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 11V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 810 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Part Status :
- Active
- Power Dissipation (Max) :
- 88W (Tc)
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 14A, 11V
- Supplier Device Package :
- D2PAK
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 2mA
product description
NEXPERIA PHB29N08T - 27A, 75V, 0