Datasheets

SIHS90N65E-GE3

Current - Continuous Drain (Id) @ 25°C :

87A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

591 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

11826 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-274AA

Part Status :

Active

Power Dissipation (Max) :

625W (Tc)

Rds On (Max) @ Id, Vgs :

29mOhm @ 45A, 10V

Supplier Device Package :

SUPER-247™ (TO-274AA)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA