Product overview
- Product number
- RFW2N06RLE
- Manufacturer
- Rochester Electronics
- product description
- N-CHANNEL POWER MOSFET
Documents and media
- Datasheets
- RFW2N06RLE
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 2A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 535 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.09W (Tc)
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 2A, 5V
- Supplier Device Package :
- 4-DIP, Hexdip
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- +10V, -5V
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
product description
N-CHANNEL POWER MOSFET