Product overview
- Product number
- FQI12N60CTU
- Manufacturer
- Rochester Electronics
- product description
- MOSFET N-CH 600V 12A I2PAK
Documents and media
- Datasheets
- FQI12N60CTU
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2290 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 3.13W (Ta), 225W (Tc)
- Rds On (Max) @ Id, Vgs :
- 650mOhm @ 6A, 10V
- Supplier Device Package :
- I2PAK (TO-262)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET N-CH 600V 12A I2PAK
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