Product overview
- Product number
- FDD6670S
- Manufacturer
- Rochester Electronics
- product description
- N-CHANNEL POWER MOSFET
Documents and media
- Datasheets
- FDD6670S
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 64A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 24 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2010 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Active
- Power Dissipation (Max) :
- 1.3W (Ta)
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 13.8A, 10V
- Supplier Device Package :
- TO-252, (D-Pak)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
product description
N-CHANNEL POWER MOSFET
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