Datasheets

FCPF11N65

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1490 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-220-3 Full Pack

Part Status :

Active

Power Dissipation (Max) :

36W (Tc)

Rds On (Max) @ Id, Vgs :

380mOhm @ 5.5A, 10V

Supplier Device Package :

TO-220F

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

5V @ 250µA