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Product overview

Product number
FDB2570
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 150V 22A TO263AB

Documents and media

Datasheets
FDB2570

Product Details

Current - Continuous Drain (Id) @ 25°C :
22A (Ta)
Drain to Source Voltage (Vdss) :
150 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1911 pF @ 75 V
Mounting Type :
Surface Mount
Operating Temperature :
-65°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Obsolete
Power Dissipation (Max) :
93W (Tc)
Rds On (Max) @ Id, Vgs :
80mOhm @ 11A, 10V
Supplier Device Package :
D2PAK (TO-263)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA

product description

MOSFET N-CH 150V 22A TO263AB

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