Datasheets

TP65H480G4JSG-TR

Current - Continuous Drain (Id) @ 25°C :

3.6A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

8V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

760 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-SMD, Flat Lead

Part Status :

Active

Power Dissipation (Max) :

13.2W (Tc)

Rds On (Max) @ Id, Vgs :

560mOhm @ 3.4A, 8V

Supplier Device Package :

3-PQFN (5x6)

Technology :

GaNFET (Cascode Gallium Nitride FET)

Vgs (Max) :

±18V

Vgs(th) (Max) @ Id :

2.8V @ 500µA