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Product overview

Product number
IRF630
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 200V 9A TO220AB

Documents and media

Datasheets
IRF630

Product Details

Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drain to Source Voltage (Vdss) :
200 V
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
800 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-
Package / Case :
TO-220-3
Part Status :
Obsolete
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
400mOhm @ 5.4A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
4V @ 250µA

product description

MOSFET N-CH 200V 9A TO220AB

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