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Product overview

Product number
IRF3708PBF
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
HEXFET SMPS POWER MOSFET

Documents and media

Datasheets
IRF3708PBF

Product Details

Current - Continuous Drain (Id) @ 25°C :
62A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
2.8V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
2417 pF @ 15 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power Dissipation (Max) :
87W (Tc)
Rds On (Max) @ Id, Vgs :
12mOhm @ 15A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±12V
Vgs(th) (Max) @ Id :
2V @ 250µA

product description

HEXFET SMPS POWER MOSFET

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