Datasheets

STU6N65K3

Current - Continuous Drain (Id) @ 25°C :

5.4A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

33 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

880 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power Dissipation (Max) :

110W (Tc)

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 2.7A, 10V

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 50µA