Product overview
- Product number
- TPN3300ANH,LQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET N-CH 100V 9.4A 8TSON
Documents and media
- Datasheets
- TPN3300ANH,LQ
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9.4A (Tc)
- Drain to Source Voltage (Vdss) :
- 100 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 880 pF @ 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power Dissipation (Max) :
- 700mW (Ta), 27W (Tc)
- Rds On (Max) @ Id, Vgs :
- 33mOhm @ 4.7A, 10V
- Supplier Device Package :
- 8-TSON Advance (3.3x3.3)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
product description
MOSFET N-CH 100V 9.4A 8TSON