Welcome to visit our website, our working hours are: Monday to Friday 9:00-18:00.

Product overview

Product number
RF1S23N06LE
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
23A, 60V, 0.065OHM, N-CHANNEL,

Documents and media

Datasheets
RF1S23N06LE

Product Details

Current - Continuous Drain (Id) @ 25°C :
23A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
850 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Part Status :
Active
Power Dissipation (Max) :
75W (Tc)
Rds On (Max) @ Id, Vgs :
65mOhm @ 23A, 5V
Supplier Device Package :
I2PAK (TO-262)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
2V @ 250µA

product description

23A, 60V, 0.065OHM, N-CHANNEL,

Purchases and prices

Recommended Products