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Product overview

Product number
IPA60R180C7XKSA1
Manufacturer
Infineon Technologies
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 600V 9A TO220-FP

Documents and media

Datasheets
IPA60R180C7XKSA1

Product Details

Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1080 pF @ 400 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Part Status :
Active
Power Dissipation (Max) :
29W (Tc)
Rds On (Max) @ Id, Vgs :
180mOhm @ 5.3A, 10V
Supplier Device Package :
PG-TO220-FP
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 260µA

product description

MOSFET N-CH 600V 9A TO220-FP

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