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Product overview

Product number
TP90H050WS
Manufacturer
Transphorm
Catalog
Transistors - FETs, MOSFETs - Single
product description
GANFET N-CH 900V 34A TO247-3

Documents and media

Datasheets
TP90H050WS

Product Details

Current - Continuous Drain (Id) @ 25°C :
34A (Tc)
Drain to Source Voltage (Vdss) :
900 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
980 pF @ 600 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C
Package / Case :
TO-247-3
Part Status :
Active
Power Dissipation (Max) :
119W (Tc)
Rds On (Max) @ Id, Vgs :
63mOhm @ 22A, 10V
Supplier Device Package :
TO-247-3
Technology :
GaNFET (Cascode Gallium Nitride FET)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.4V @ 700µA

product description

GANFET N-CH 900V 34A TO247-3

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