Datasheets

BSP225,115

Current - Continuous Drain (Id) @ 25°C :

225mA (Ta)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

90 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Not For New Designs

Power Dissipation (Max) :

1.5W (Ta)

Rds On (Max) @ Id, Vgs :

15Ohm @ 200mA, 10V

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.8V @ 1mA