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Product overview

Product number
FQPF2N90
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 900V 1.4A TO220F

Documents and media

Datasheets
FQPF2N90

Product Details

Current - Continuous Drain (Id) @ 25°C :
1.4A (Tc)
Drain to Source Voltage (Vdss) :
900 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
500 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Part Status :
Obsolete
Power Dissipation (Max) :
35W (Tc)
Rds On (Max) @ Id, Vgs :
7.2Ohm @ 700mA, 10V
Supplier Device Package :
TO-220F-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250µA

product description

MOSFET N-CH 900V 1.4A TO220F

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