Datasheets

NP32N055SHE-E1-AY

Current - Continuous Drain (Id) @ 25°C :

32A (Tc)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

32 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power Dissipation (Max) :

1.2W (Ta), 66W (Tc)

Rds On (Max) @ Id, Vgs :

25mOhm @ 16A, 10V

Supplier Device Package :

TO-252 (MP-3ZK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 250µA