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Product overview

Product number
BSB053N03LPG
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Documents and media

Datasheets
BSB053N03LPG

Product Details

Current - Continuous Drain (Id) @ 25°C :
17A (Ta), 71A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2700 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
3-WDSON
Part Status :
Active
Power Dissipation (Max) :
2.3W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs :
5.3mOhm @ 30A, 10V
Supplier Device Package :
MG-WDSON-2, CanPAK M™
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 250µA

product description

N-CHANNEL POWER MOSFET

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