Product overview
- Product number
- BSB053N03LPG
- Manufacturer
- Rochester Electronics
- product description
- N-CHANNEL POWER MOSFET
Documents and media
- Datasheets
- BSB053N03LPG
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 17A (Ta), 71A (Tc)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2700 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- 3-WDSON
- Part Status :
- Active
- Power Dissipation (Max) :
- 2.3W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs :
- 5.3mOhm @ 30A, 10V
- Supplier Device Package :
- MG-WDSON-2, CanPAK M™
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
product description
N-CHANNEL POWER MOSFET