Product overview
- Product number
- IRFS830B
- Manufacturer
- Rochester Electronics
- product description
- N-CHANNEL POWER MOSFET
Documents and media
- Datasheets
- IRFS830B
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Tj)
- Drain to Source Voltage (Vdss) :
- 500 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 35 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3 Full Pack
- Part Status :
- Active
- Power Dissipation (Max) :
- 38W (Tj)
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2.25A, 10V
- Supplier Device Package :
- TO-220F-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
N-CHANNEL POWER MOSFET
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