Product overview
- Product number
- FQE10N20CTU
- Manufacturer
- Rochester Electronics
- product description
- MOSFET N-CH 200V 4A TO126-3
Documents and media
- Datasheets
- FQE10N20CTU
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 510 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-225AA, TO-126-3
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 12.8W (Tc)
- Rds On (Max) @ Id, Vgs :
- 360mOhm @ 2A, 10V
- Supplier Device Package :
- TO-126-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET N-CH 200V 4A TO126-3
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