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Product overview

Product number
IRFR210BTF
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Documents and media

Datasheets
IRFR210BTF

Product Details

Current - Continuous Drain (Id) @ 25°C :
2.7A (Tc)
Drain to Source Voltage (Vdss) :
200 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
225 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Active
Power Dissipation (Max) :
2.5W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 1.35A, 10V
Supplier Device Package :
TO-252, (D-Pak)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4V @ 250µA

product description

N-CHANNEL POWER MOSFET

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