Product overview
- Product number
- A2G35S200-01SR3
- Manufacturer
- NXP Semiconductors
- Catalog
- Transistors - FETs, MOSFETs - RF
- product description
- AIRFAST RF POWER GAN TRANSISTOR
Documents and media
- Datasheets
- A2G35S200-01SR3
Product Details
- Current - Test :
- 291 mA
- Current Rating (Amps) :
- -
- Frequency :
- 3.4GHz ~ 3.6GHz
- Gain :
- 16.1dB
- Noise Figure :
- -
- Package / Case :
- NI-400S-2S
- Part Status :
- Active
- Power - Output :
- 180W
- Supplier Device Package :
- NI-400S-2S
- Transistor Type :
- GaN HEMT
- Voltage - Rated :
- 125 V
- Voltage - Test :
- 48 V
product description
AIRFAST RF POWER GAN TRANSISTOR
