Product overview
- Product number
- MSCSM70VM10C4AG
- Manufacturer
- Microchip Technology
- product description
- PM-MOSFET-SIC-SBD~-SP4
Documents and media
- Datasheets
- MSCSM70VM10C4AG
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 238A (Tc)
- Drain to Source Voltage (Vdss) :
- 700V
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N Channel (Phase Leg)
- Gate Charge (Qg) (Max) @ Vgs :
- 430nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 700V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 674W (Tc)
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 80A, 20V
- Supplier Device Package :
- SP4
- Vgs(th) (Max) @ Id :
- 2.4V @ 8mA
product description
PM-MOSFET-SIC-SBD~-SP4