Product overview
Documents and media
- Datasheets
- SQJ960EP-T1_GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 8A
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 735pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Part Status :
- Active
- Power - Max :
- 34W
- Rds On (Max) @ Id, Vgs :
- 36mOhm @ 5.3A, 10V
- Supplier Device Package :
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
MOSFET 2N-CH 60V 8A
