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Product overview

Product number
NVMD3P03R2G
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
SMALL SIGNAL FIELD-EFFECT TRANSI

Documents and media

Datasheets
NVMD3P03R2G

Product Details

Current - Continuous Drain (Id) @ 25°C :
2.34A (Tj)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 24V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
730mW (Ta)
Rds On (Max) @ Id, Vgs :
85mOhm @ 3.05A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
2.5V @ 250µA

product description

SMALL SIGNAL FIELD-EFFECT TRANSI

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