Product overview
Documents and media
- Datasheets
- EPC2102ENGRT
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 23A (Tj)
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 830pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- -
- Rds On (Max) @ Id, Vgs :
- 4.4mOhm @ 20A, 5V
- Supplier Device Package :
- Die
- Vgs(th) (Max) @ Id :
- 2.5V @ 7mA
product description
GANFET 2 N-CHANNEL 60V 23A DIE
Purchases and prices
Recommended Products
You may be looking for
1625F039
SIT3372AC-4E2-28NZ50.000000
1611F241
TMS320F240PQG4
1626F260
3080-A-832-B
1154-4-S
SIT3373AC-1E2-28NZ614.400000
PIC18F4458T-I/ML
SIT3372AC-2E2-33NG161.132810
CY8C205344-12PVXI
1610L451
1723-440-AL
SIT3372AC-4E2-25NX80.000000
LM3S8538-IQC50-A2T
3357-B-632-SS
1611F242
1626F261
SIT3372AC-4E2-25NG156.250000
TMS320F241PGS