Product overview
- Product number
- CSD85312Q3E
- Manufacturer
- Texas Instruments
- product description
- MOSFET 2N-CH 20V 39A 8VSON
Documents and media
- Datasheets
- CSD85312Q3E
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 39A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate, 5V Drive
- FET Type :
- 2 N-Channel (Dual) Common Source
- Gate Charge (Qg) (Max) @ Vgs :
- 15.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerVDFN
- Part Status :
- Active
- Power - Max :
- 2.5W
- Rds On (Max) @ Id, Vgs :
- 12.4mOhm @ 10A, 8V
- Supplier Device Package :
- 8-VSON (3.3x3.3)
- Vgs(th) (Max) @ Id :
- 1.4V @ 250µA
product description
MOSFET 2N-CH 20V 39A 8VSON
