Product overview
Documents and media
- Datasheets
- TPD3215M
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 70A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2260pF @ 100V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Obsolete
- Power - Max :
- 470W
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 30A, 8V
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- -
product description
GANFET 2N-CH 600V 70A MODULE
