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Product overview

Product number
TSM6502CR RLG
Manufacturer
Taiwan Semiconductor
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET N/P-CH 60V 24A/18A 8PDFN

Documents and media

Datasheets
TSM6502CR RLG

Product Details

Current - Continuous Drain (Id) @ 25°C :
24A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Standard
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1159pF @ 30V, 930pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Part Status :
Active
Power - Max :
40W
Rds On (Max) @ Id, Vgs :
34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Supplier Device Package :
8-PDFN (5x6)
Vgs(th) (Max) @ Id :
2.5V @ 250µA

product description

MOSFET N/P-CH 60V 24A/18A 8PDFN

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