Product overview
- Product number
- NE856M02-T1-AZ
- Manufacturer
- CEL (California Eastern Laboratories)
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- SAME AS 2SC5336 NPN SILICON AMPL
Documents and media
- Datasheets
- NE856M02-T1-AZ
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 20mA, 10V
- Frequency - Transition :
- 6.5GHz
- Gain :
- 12dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.8dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Part Status :
- Last Time Buy
- Power - Max :
- 1.2W
- Supplier Device Package :
- SOT-89
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
product description
SAME AS 2SC5336 NPN SILICON AMPL
