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Product overview

Product number
NE662M04-T2-A
Manufacturer
CEL (California Eastern Laboratories)
Catalog
Transistors - Bipolar (BJT) - RF
product description
SAME AS 2SC5508 NPN SILICON AMPL

Documents and media

Datasheets
NE662M04-T2-A

Product Details

Current - Collector (Ic) (Max) :
35mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 5mA, 2V
Frequency - Transition :
25GHz
Gain :
17dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.1dB @ 2GHz
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-343F
Part Status :
Last Time Buy
Power - Max :
115mW
Supplier Device Package :
M04
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
3.3V

product description

SAME AS 2SC5508 NPN SILICON AMPL

Purchases and prices

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