Product overview
- Product number
- NE85633-T1B-A
- Manufacturer
- CEL (California Eastern Laboratories)
- Catalog
- Transistors - Bipolar (BJT) - RF
- product description
- SAME AS 2SC3356 NPN SILICON AMPL
Documents and media
- Datasheets
- NE85633-T1B-A
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 20mA, 10V
- Frequency - Transition :
- 7GHz
- Gain :
- 11.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Last Time Buy
- Power - Max :
- 200mW
- Supplier Device Package :
- 3-MINIMOLD
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
product description
SAME AS 2SC3356 NPN SILICON AMPL
Purchases and prices
Recommended Products
You may be looking for
SIT9120AC-1D1-XXE161.132800
910-2MM
850-14143
850-15551
913-865
SIT3373AI-1E3-30NG307.695484
910-625
CBMFTS015A
STM32F100CBT6BTR
SIT9365AI-1E3-33N322.265625
852-11952
PIC18F47K40-E/P
SIT3373AI-4E3-28NG222.750000
850-14505
ATTINY84A-CCU
PIC18F25K40-I/ML
SIT9120AC-1C1-33S133.333300
910-305
850-14144
850-15552
