Product overview
- Product number
- RN4990(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE
Documents and media
- Datasheets
- RN4990(TE85L,F)
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 5V
- Frequency - Transition :
- 250MHz, 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Part Status :
- Active
- Power - Max :
- 200mW
- Resistor - Base (R1) :
- 4.7kOhms
- Resistor - Emitter Base (R2) :
- -
- Supplier Device Package :
- US6
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
product description
NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE
Purchases and prices
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