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Product overview

Product number
RN4990(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
product description
NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE

Documents and media

Datasheets
RN4990(TE85L,F)

Product Details

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Frequency - Transition :
250MHz, 200MHz
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Part Status :
Active
Power - Max :
200mW
Resistor - Base (R1) :
4.7kOhms
Resistor - Emitter Base (R2) :
-
Supplier Device Package :
US6
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

NPN + PNP BRT, Q1BSR=4.7KΩ, Q1BE

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