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Product overview

Product number
RN1705,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
product description
NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO

Documents and media

Datasheets
RN1705,LF

Product Details

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Package / Case :
5-TSSOP, SC-70-5, SOT-353
Part Status :
Active
Power - Max :
200mW
Resistor - Base (R1) :
2.2kOhms
Resistor - Emitter Base (R2) :
47kOhms
Supplier Device Package :
USV
Transistor Type :
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

product description

NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO

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