Product overview
- Product number
- RN1911FE,LF(CT
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=I
Documents and media
- Datasheets
- RN1911FE,LF(CT
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 10kOhms
- Resistor - Emitter Base (R2) :
- -
- Supplier Device Package :
- ES6
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
product description
NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=I
