Product overview
- Product number
- SIDC23D120H8X1SA1
- Manufacturer
- Infineon Technologies
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE GEN PURP 1.2KV 35A WAFER
Documents and media
- Datasheets
- SIDC23D120H8X1SA1
Product Details
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 35A (DC)
- Current - Reverse Leakage @ Vr :
- 27 µA @ 1200 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 175°C
- Package / Case :
- Die
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Sawn on foil
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.97 V @ 35 A
product description
DIODE GEN PURP 1.2KV 35A WAFER
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