Product overview
- Product number
- 1N8031-GA
- Manufacturer
- GeneSiC Semiconductor
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE SCHOTTKY 650V 1A TO276
Documents and media
- Datasheets
- 1N8031-GA
Product Details
- Capacitance @ Vr, F :
- 76pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 250°C
- Package / Case :
- TO-276AA
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-276
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.5 V @ 1 A
product description
DIODE SCHOTTKY 650V 1A TO276
