Product overview
- Product number
- 1N8026-GA
- Manufacturer
- GeneSiC Semiconductor
- Catalog
- Diodes - Rectifiers - Single
- product description
- DIODE SILICON 1.2KV 8A TO257
Documents and media
- Datasheets
- 1N8026-GA
Product Details
- Capacitance @ Vr, F :
- 237pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 8A (DC)
- Current - Reverse Leakage @ Vr :
- 10 µA @ 1200 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 250°C
- Package / Case :
- TO-257-3
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- TO-257
- Voltage - DC Reverse (Vr) (Max) :
- 1200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.6 V @ 2.5 A
product description
DIODE SILICON 1.2KV 8A TO257
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