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Product overview

Product number
IDB10S60C
Manufacturer
Infineon Technologies
Catalog
Diodes - Rectifiers - Single
product description
DIODE SILICON 600V 10A D2PAK

Documents and media

Datasheets
IDB10S60C

Product Details

Capacitance @ Vr, F :
480pF @ 1V, 1MHz
Current - Average Rectified (Io) :
10A (DC)
Current - Reverse Leakage @ Vr :
140 µA @ 600 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Part Status :
Obsolete
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 10 A

product description

DIODE SILICON 600V 10A D2PAK

Purchases and prices

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