Product overview
- Product number
- IDW10G65C5XKSA1
- Manufacturer
- Rochester Electronics
- Catalog
- Diodes - Rectifiers - Single
- product description
- SIC DIODES
Documents and media
- Datasheets
- IDW10G65C5XKSA1
Product Details
- Capacitance @ Vr, F :
- 300pF @ 1V, 1MHz
- Current - Average Rectified (Io) :
- 10A (DC)
- Current - Reverse Leakage @ Vr :
- 180 µA @ 650 V
- Diode Type :
- Silicon Carbide Schottky
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 175°C
- Package / Case :
- TO-247-3
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 0 ns
- Speed :
- No Recovery Time > 500mA (Io)
- Supplier Device Package :
- PG-TO247-3
- Voltage - DC Reverse (Vr) (Max) :
- 650 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.7 V @ 10 A
product description
SIC DIODES
Purchases and prices
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