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Product overview

Product number
JAN1N6625US
Manufacturer
Microchip Technology
Catalog
Diodes - Rectifiers - Single
product description
DIODE GEN PURP 1.1KV 1A D5A

Documents and media

Datasheets
JAN1N6625US

Product Details

Capacitance @ Vr, F :
10pF @ 10V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
1 µA @ 1100 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 150°C
Package / Case :
SQ-MELF, A
Part Status :
Active
Reverse Recovery Time (trr) :
60 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
D-5A
Voltage - DC Reverse (Vr) (Max) :
1100 V
Voltage - Forward (Vf) (Max) @ If :
1.75 V @ 1 A

product description

DIODE GEN PURP 1.1KV 1A D5A

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