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Product overview

Product number
SE10FJ-M3/I
Manufacturer
Vishay
Catalog
Diodes - Rectifiers - Single
product description
DIODE GEN PURP 600V 1A DO219AB

Documents and media

Datasheets
SE10FJ-M3/I

Product Details

Capacitance @ Vr, F :
7.5pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 600 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
DO-219AB
Part Status :
Active
Reverse Recovery Time (trr) :
780 ns
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
DO-219AB (SMF)
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.05 V @ 1 A

product description

DIODE GEN PURP 600V 1A DO219AB

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